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SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET

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Description

SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fea.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Features

* Order code SCT012H90G3AG VDS 900 V RDS(on) typ. 12 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency ID

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT012H90G3AG Distributors

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SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics
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