Datasheet Details
- Part number
- SCT012H90G3AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 385.75 KB
- Datasheet
- SCT012H90G3AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG Description
SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fea.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT012H90G3AG Features
* Order code SCT012H90G3AG
VDS 900 V
RDS(on) typ. 12 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency
ID
SCT012H90G3AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
📁 Related Datasheet
📌 All Tags