SCT012W90G3AG Datasheet - STMicroelectronics

SCT012W90G3AG, Automotive-grade silicon carbide Power MOSFET

SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT012W90G3AG-STMicroelectronics.pdf

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Datasheet Details

Part number:

SCT012W90G3AG

Manufacturer:

STMicroelectronics ↗

File Size:

229.49 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high o

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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