SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT012W90G3AG
Manufacturer: STMicroelectronics ↗
File Size: 229.49 KB
Datasheet: SCT012W90G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high o

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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