Datasheet Details
- Part number
- SCT012W90G3AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 229.49 KB
- Datasheet
- SCT012W90G3AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT012W90G3AG Description
SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT012W90G3AG Features
* Order code SCT012W90G3AG
VDS 900 V
RDS(on) typ. 12 mΩ
ID 110 A
HiP247
3 2
1
D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high o
SCT012W90G3AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
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