Datasheet Details
- Part number
- SCT018H65G3AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 386.30 KB
- Datasheet
- SCT018H65G3AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT018H65G3AG Description
SCT018H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Feat.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT018H65G3AG Features
* Order code SCT018H65G3AG
VDS 650 V
RDS(on) typ. 20 mΩ
ID 55 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effic
SCT018H65G3AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
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