* Order code SCT018H65G3AG VDS 650 V RDS(on) typ. 20 mΩ ID 55 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effic
SCT018H65G3AG Datasheet (386.30 KB)
SCT018H65G3AG
386.30 KB
Automotive-grade silicon carbide power mosfet.
SCT018H65G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Feat.
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