SCT015W120G3-4AG Datasheet, Mosfet, STMicroelectronics

SCT015W120G3-4AG Features

  • Mosfet Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB)
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode

PDF File Details

Part number:

SCT015W120G3-4AG

Manufacturer:

STMicroelectronics ↗

File Size:

210.41kb

Download:

📄 Datasheet

Description:

Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Datasheet Preview: SCT015W120G3-4AG 📥 Download PDF (210.41kb)
Page 2 of SCT015W120G3-4AG Page 3 of SCT015W120G3-4AG

SCT015W120G3-4AG Application

  • Applications Power source(2) ND1TPS2DS3G4
  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board char

TAGS

SCT015W120G3-4AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

📁 Related Datasheet

SCT011H75G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT011H75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) F.

SCT012H90G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fea.

SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package Features Order code SCT012W90G3AG.

SCT014HU65G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT014HU65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in an HU3PAK package Features TAB 7 Order code SC.

SCT018H65G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT018H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Feat.

SCT01L60 - 1A Logic Level Triac (KODENSHI)
600V, 1A LOGIC LEVEL TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature.

SCT020H120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT020H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCT020HU120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package TAB Gate (1) Driver source (.

SCT020W120G3-4AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT020W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package Features Order code SCT02.

SCT025H120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT025H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fe.

Stock and price

part
STMicroelectronics
TO247-4
DigiKey
SCT015W120G3-4AG
0 In Stock
Qty : 600 units
Unit Price : $28.75
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts