Datasheet Details
- Part number
- SCT020H120G3AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 357.85 KB
- Datasheet
- SCT020H120G3AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT020H120G3AG Description
SCT020H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT020H120G3AG Features
* Order code SCT020H120G3AG
VDS 1200 V
RDS(on) typ. 18.5 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency
SCT020H120G3AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
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