SCT020H120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT020H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT020H120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 357.85 KB
Datasheet: SCT020H120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT020H120G3AG VDS 1200 V RDS(on) typ. 18.5 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT020H120G3AG Distributors

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SCT020H120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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