* Order code SCT025H120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 55 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased eff
SCT025H120G3AG Datasheet (364.80 KB)
SCT025H120G3AG
364.80 KB
Automotive-grade silicon carbide power mosfet.
SCT025H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fe.
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