Datasheet Details
- Part number
- SCT025W120G3-4AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 504.11 KB
- Datasheet
- SCT025W120G3-4AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT025W120G3-4AG Description
SCT025W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT025W120G3-4AG Features
* Order code SCT025W120G3-4AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247-4
2 34 1
Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
SCT025W120G3-4AG Applications
* Power source(2)
ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
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