SCT025W120G3-4AG
504.11kb
Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
TAGS
📁 Related Datasheet
SCT025W120G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT025W120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
Features
Order code SCT025W120G3.
SCT025H120G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT025H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Fe.
SCT020H120G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT020H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
.
SCT020HU120G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT020HU120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package
TAB
Gate (1) Driver source (.
SCT020W120G3-4AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT020W120G3-4AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package
Features
Order code SCT02.
SCT027H65G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT027H65G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Feat.
SCT027W65G3-4AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT027W65G3-4AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package
Features
Order code SCT027W65G.
SCT011H75G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT011H75G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
F.
SCT012H90G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT012H90G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Fea.
SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET
(STMicroelectronics)
SCT012W90G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package
Features
Order code SCT012W90G3AG.