SCT025W120G3-4AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT025W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT025W120G3-4AG
Manufacturer: STMicroelectronics ↗
File Size: 504.11 KB
Datasheet: SCT025W120G3-4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT025W120G3-4AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

Applications

* Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT025W120G3-4AG Distributors

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SCT025W120G3-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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