* Order code SCT027H65G3AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effic
SCT027H65G3AG Datasheet (369.76 KB)
SCT027H65G3AG
369.76 KB
Automotive-grade silicon carbide power mosfet.
SCT027H65G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Feat.
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