SCT027H65G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT027H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Feat.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT027H65G3AG
Manufacturer: STMicroelectronics ↗
File Size: 369.76 KB
Datasheet: SCT027H65G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT027H65G3AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effic

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT027H65G3AG Distributors

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SCT027H65G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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