SCT027TO65G3 - 650V 60A Silicon carbide Power MOSFET

STMicroelectronics

SCT027TO65G3 Datasheet Preview — Preview of SCT027TO65G3 PDF

Datasheet Details

Part number	SCT027TO65G3
Manufacturer	STMicroelectronics ↗
File Size	1.49 MB
Description	650V 60A Silicon carbide Power MOSFET
Datasheet	SCT027TO65G3-STMicroelectronics.pdf

SCT027TO65G3 Product details

Description

Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.The device

Features

TO-LL Order code VDS SCT027TO65G3 650 V.
Very fast and robust intrinsic body diode.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Source sensing pin for increased efficiency RDS(on) typ. 29 mΩ ID 60 A Drain (TAB).

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Published: Jul 6, 2025 |