SCT020W120G3-4AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCT020W120G3-4AG Description

SCT020W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT020W120G3-4AG Features

* Order code SCT020W120G3-4AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

SCT020W120G3-4AG Applications

* Power source(2) ND1TPS2DS3G4
* DC/DC converter for EV/HEV
* Main inverter (electric traction)

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Datasheet Details

Part number: SCT020W120G3-4AG
Manufacturer: STMicroelectronics ↗
File Size: 196.41 KB
Datasheet: SCT020W120G3-4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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