SCT025W120G3AG - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	SCT025W120G3AG
Manufacturer	STMicroelectronics
File Size	489.01 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT025W120G3AG Datasheet
Additional preview pages of the SCT025W120G3AG datasheet.

Product details

Description

S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.The device

Features

Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Feb 25, 2024 |