SCT027W65G3-4AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT027W65G3-4AG
Manufacturer	STMicroelectronics ↗
File Size	192.71 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT027W65G3-4AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3).

📁 SCT027W65G3-4AG Similar Datasheet

Other Datasheets by STMicroelectronics

Published: Aug 29, 2024 |