SCT027W65G3-4AG Datasheet - STMicroelectronics

SCT027W65G3-4AG, Automotive-grade silicon carbide Power MOSFET

SCT027W65G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Details

Part number:

SCT027W65G3-4AG

Manufacturer:

STMicroelectronics ↗

File Size:

192.71 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

Applications

* Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT027W65G3-4AG Distributors

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SCT027W65G3-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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