* Order code SCT011H75G3AG VDS 750 V RDS(on) typ. 11.4 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency
SCT011H75G3AG Datasheet (390.80 KB)
SCT011H75G3AG
390.80 KB
Automotive-grade silicon carbide power mosfet.
SCT011H75G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
F.
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