SCT3030AR Datasheet, Mosfet, ROHM

PDF File Details

Part number:

SCT3030AR

Manufacturer:

ROHM ↗

File Size:

1.19MB

Download:

📄 Datasheet

Description:

N-channel sic power mosfet.

TAGS

📁 Related Datasheet

SCT3030AL - N-channel SiC power MOSFET (ROHM)
SCT3030AL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 30mW 70A 262W lFeatures 1) Low on-resistance 2) Fast switching speed.

SCT3030KL - N-channel SiC power MOSFET (ROHM)
SCT3030KL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 30mW 72A 339W lOutline TO-247N lInner circuit (1)(2)(3) lFeature.

SCT3017ALHR - Automotive Grade N-channel SiC power MOSFET (ROHM)
SCT3017ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 17mΩ 118A 427W lOutline TO-247N lInner circuit .

SCT3022AL - N-channel SiC power MOSFET (ROHM)
SCT3022AL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 22mW 93A 339W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures.

SCT3022ALHR - Automotive Grade N-channel SiC power MOSFET (ROHM)
SCT3022ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 22mΩ 93A 339W lOutline TO-247N lInner circuit .

SCT3022KL - N-channel SiC power MOSFET (ROHM)
SCT3022KL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 22mW 95A 427W lOutline TO-247N lInner circuit (1)(2)(3) lFeature.

SCT3022KLHR - Automotive Grade N-channel SiC power MOSFET (ROHM)
SCT3022KLHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 1200V 22mΩ 95A 427W lOutline TO-247N lInner circuit.

SCT3040KL - N-channel SiC power MOSFET (ROHM)
SCT3040KL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 40mW 55A 262W lFeatures 1) Low on-resistance 2) Fast switching spee.

SCT3040KR - N-channel SiC power MOSFET (ROHM)
SCT3040KR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 1200V 40mΩ 55A 262W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) l.

SCT3060 - N-Channel MOSFET (INCHANGE)
isc N-Channel SiC SMOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% av.