STMicroelectronics
SCTH90N65G2V-7 - Silicon carbide Power MOSFET
SCTH90N65G2V-7
Datasheet
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate
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