SCTH90N65G2V-7 Datasheet, Mosfet, STMicroelectronics

SCTH90N65G2V-7 Features

• Mosfet Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ
• Very high operating junction temperature capability (TJ = 175 °C)
• Very fast and robust intrinsic body d

PDF File Details

Part number:

SCTH90N65G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

612.15kb

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH90N65G2V-7 Application

• Applications
• Switching applications
• Power supply for renewable energy systems
• High frequency DC-DC converters Descrip

TAGS

SCTH90N65G2V-7

STMicroelectronics

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