SCTH90N65G2V-7 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

📥 Download Datasheet

SCTH90N65G2V-7 Datasheet Preview — Preview of SCTH90N65G2V-7 PDF

Datasheet Specifications

Part number: SCTH90N65G2V-7
Manufacturer: STMicroelectronics ↗
File Size: 612.15 KB
Datasheet: SCTH90N65G2V-7-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and robust intrinsic body diode

Applications

* Switching applications
* Power supply for renewable energy systems

SCTH90N65G2V-7 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTH90N65G2V-7 Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTH90N65G2V-7-like datasheet