* Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitances ID 116 A Applications
* Switching applica
SCTH90N65G2V-7 Datasheet (612.15 KB)
SCTH90N65G2V-7
612.15 KB
Silicon carbide power mosfet.
SCTH90N65G2V-7
Datasheet
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate .
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