SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTH40N120G2V7AG Description

SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH40N120G2V7AG Features

* Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTH40N120G2V7AG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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Datasheet Details

Part number: SCTH40N120G2V7AG
Manufacturer: STMicroelectronics ↗
File Size: 371.10 KB
Datasheet: SCTH40N120G2V7AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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