Datasheet4U.com

SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

📥 Download Datasheet

SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTH40N120G2V7AG

Datasheet Details

Part number	SCTH40N120G2V7AG
Manufacturer	STMicroelectronics
File Size	371.10 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V7AG Datasheet
Additional preview pages of the SCTH40N120G2V7AG datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

📁 Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

Other Datasheets by STMicroelectronics

SCTH40N120G2V-7 - Silicon carbide Power MOSFET
SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET
SCTH35N65G2V-7 - Silicon carbide Power MOSFET
SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET
SCTH60N120G2-7 - Silicon carbide Power MOSFET

Published: Apr 15, 2020 |