SCTH60N120G2-7 Datasheet, Mosfet, STMicroelectronics

SCTH60N120G2-7 Features

• Mosfet Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance

PDF File Details

Part number:

SCTH60N120G2-7

Manufacturer:

STMicroelectronics ↗

File Size:

348.56kb

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH60N120G2-7 Application

• Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide P

TAGS

SCTH60N120G2-7

STMicroelectronics

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