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SCTH60N120G2-7 - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTH60N120G2-7
Manufacturer	STMicroelectronics ↗
File Size	348.56 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH60N120G2-7-STMicroelectronics.pdf

SCTH60N120G2-7 Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Jun 26, 2023 |