SCTH60N120G2-7 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

📥 Download Datasheet

SCTH60N120G2-7 Datasheet Preview — Preview of SCTH60N120G2-7 PDF

Datasheet Specifications

Part number: SCTH60N120G2-7
Manufacturer: STMicroelectronics ↗
File Size: 348.56 KB
Datasheet: SCTH60N120G2-7-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Switching mode power supply
* DC-DC converters

SCTH60N120G2-7 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTH60N120G2-7 Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTH60N120G2-7-like datasheet