SCTH60N120G2-7 Datasheet - STMicroelectronics

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SCTH60N120G2-7 Silicon carbide Power MOSFET

SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Details

Part number:

SCTH60N120G2-7

Manufacturer:

STMicroelectronics ↗

File Size:

348.56 KB

Description:

Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Switching mode power supply
* DC-DC converters

SCTH60N120G2-7 Distributors

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SCTH60N120G2-7 Silicon carbide Power MOSFET STMicroelectronics

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