SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTH35N65G2V-7AG Description

SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH35N65G2V-7AG Features

* Order code SCTH35N65G2V-7AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTH35N65G2V-7AG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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Datasheet Details

Part number: SCTH35N65G2V-7AG
Manufacturer: STMicroelectronics ↗
File Size: 375.29 KB
Datasheet: SCTH35N65G2V-7AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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