Datasheet Details
- Part number
- SCTH35N65G2V-7AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 375.29 KB
- Datasheet
- SCTH35N65G2V-7AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCTH35N65G2V-7AG Description
SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH35N65G2V-7AG Features
* Order code SCTH35N65G2V-7AG
VDS 650 V
RDS(on) max. 67 mΩ
ID 45 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
SCTH35N65G2V-7AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
📁 Related Datasheet
📌 All Tags