Datasheet Details
- Part number
- SCTH100N120G2-AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 434.83 KB
- Datasheet
- SCTH100N120G2-AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCTH100N120G2-AG Description
SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH100N120G2-AG Features
* Order code SCTH100N120G2-AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode
SCTH100N120G2-AG Applications
* Traction inverters
* DC-DC converters
* Solar inverters
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