SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTH100N120G2-AG
Manufacturer: STMicroelectronics ↗
File Size: 434.83 KB
Datasheet: SCTH100N120G2-AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode

Applications

* Traction inverters
* DC-DC converters
* Solar inverters

SCTH100N120G2-AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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