SCTH100N120G2-AG Datasheet - STMicroelectronics

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SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET

SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Details

Part number:

SCTH100N120G2-AG

Manufacturer:

STMicroelectronics ↗

File Size:

434.83 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode

Applications

* Traction inverters
* DC-DC converters
* Solar inverters

SCTH100N120G2-AG Distributors

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SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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