Datasheet Details
- Part number
- SCTH100N65G2-7AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 368.81 KB
- Datasheet
- SCTH100N65G2-7AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG Description
SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH100N65G2-7AG Features
* Order code SCTH100N65G2-7AG
VDS 650 V
RDS(on) max. 26 mΩ
ID 95 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
SCTH100N65G2-7AG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
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