SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTH100N65G2-7AG Description

SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH100N65G2-7AG Features

* Order code SCTH100N65G2-7AG VDS 650 V RDS(on) max. 26 mΩ ID 95 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTH100N65G2-7AG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

📥 Download Datasheet

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Datasheet Details

Part number: SCTH100N65G2-7AG
Manufacturer: STMicroelectronics ↗
File Size: 368.81 KB
Datasheet: SCTH100N65G2-7AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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