SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTH100N65G2-7AG
Manufacturer: STMicroelectronics ↗
File Size: 368.81 KB
Datasheet: SCTH100N65G2-7AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTH100N65G2-7AG VDS 650 V RDS(on) max. 26 mΩ ID 95 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTH100N65G2-7AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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