SCTH40N120G2V-7 Datasheet, Mosfet, STMicroelectronics

SCTH40N120G2V-7 Features

  • Mosfet Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust int

PDF File Details

Part number:

SCTH40N120G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

364.24kb

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Datasheet Preview: SCTH40N120G2V-7 📥 Download PDF (364.24kb)
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SCTH40N120G2V-7 Application

  • Applications
  • Switching mode power supply
  • DC-DC converters
  • Industrial motor control Power source (3, 4, 5, 6, 7) N-chG

TAGS

SCTH40N120G2V-7
Silicon
carbide
Power
MOSFET
STMicroelectronics

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Stock and price

STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
DigiKey
SCTH40N120G2V-7
0 In Stock
Qty : 500 units
Unit Price : $10.3
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