SCTH40N120G2V-7 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTH40N120G2V-7
Manufacturer: STMicroelectronics ↗
File Size: 364.24 KB
Datasheet: SCTH40N120G2V-7-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source Kelvin pin for increas

Applications

* Switching mode power supply
* DC-DC converters

SCTH40N120G2V-7 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTH40N120G2V-7 Silicon carbide Power MOSFET STMicroelectronics

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