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SCTH40N120G2V-7

Silicon carbide Power MOSFET

SCTH40N120G2V-7 Features

* Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A

* Very high operating junction temperature capability (TJ = 175 °C)

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Source Kelvin pin for increas

SCTH40N120G2V-7 Datasheet (364.24 KB)

Preview of SCTH40N120G2V-7 PDF

Datasheet Details

Part number:

SCTH40N120G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

364.24 KB

Description:

Silicon carbide power mosfet.

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SCTH40N120G2V-7 Silicon carbide Power MOSFET STMicroelectronics

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