Datasheet Details
- Part number
- SCTH40N120G2V-7
- Manufacturer
- STMicroelectronics ↗
- File Size
- 364.24 KB
- Datasheet
- SCTH40N120G2V-7-STMicroelectronics.pdf
- Description
- Silicon carbide Power MOSFET
SCTH40N120G2V-7 Description
SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH40N120G2V-7 Features
* Order code
VDS
RDS(on) max. ID
SCTH40N120G2V-7
1200 V
100 mΩ
36 A
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source Kelvin pin for increas
SCTH40N120G2V-7 Applications
* Switching mode power supply
* DC-DC converters
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