SCTH35N65G2V-7 - Silicon carbide Power MOSFET

STMicroelectronics

SCTH35N65G2V-7 Description

SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH35N65G2V-7 Features

* Order code VDS SCTH35N65G2V-7 650 V
* Very fast and robust intrinsic body diode

SCTH35N65G2V-7 Applications

* Switching mode power supply
* EV chargers

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Datasheet Details

Part number: SCTH35N65G2V-7
Manufacturer: STMicroelectronics ↗
File Size: 613.37 KB
Datasheet: SCTH35N65G2V-7-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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