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SCTH35N65G2V-7

Silicon carbide Power MOSFET

SCTH35N65G2V-7 Features

* Order code VDS SCTH35N65G2V-7 650 V

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* Switching mode power supply

* EV chargers

* DC-DC converters RDS(on) typ. 55 mΩ ID 45 A Gate (1) Driver source (2) Power source (3, 4, 5,

SCTH35N65G2V-7 Datasheet (613.37 KB)

Preview of SCTH35N65G2V-7 PDF

Datasheet Details

Part number:

SCTH35N65G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

613.37 KB

Description:

Silicon carbide power mosfet.
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.

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SCTH35N65G2V-7 Silicon carbide Power MOSFET STMicroelectronics

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