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SCTH35N65G2V-7 Silicon carbide Power MOSFET

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Description

SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Features

* Order code VDS SCTH35N65G2V-7 650 V
* Very fast and robust intrinsic body diode

Applications

* Switching mode power supply
* EV chargers

SCTH35N65G2V-7 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTH35N65G2V-7 Silicon carbide Power MOSFET STMicroelectronics
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