Datasheet Details
- Part number
- SCTH35N65G2V-7
- Manufacturer
- STMicroelectronics ↗
- File Size
- 613.37 KB
- Datasheet
- SCTH35N65G2V-7-STMicroelectronics.pdf
- Description
- Silicon carbide Power MOSFET
SCTH35N65G2V-7 Description
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH35N65G2V-7 Features
* Order code
VDS
SCTH35N65G2V-7
650 V
* Very fast and robust intrinsic body diode
SCTH35N65G2V-7 Applications
* Switching mode power supply
* EV chargers
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