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SCTH60N120G2-7AG Automotive-grade silicon carbide Power MOSFET

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Description

SCTH60N120G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Features

* Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTH60N120G2-7AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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