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SCTH60N120G2-7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTH60N120G2-7AG
Manufacturer	STMicroelectronics ↗
File Size	351.70 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTH60N120G2-7AG-STMicroelectronics.pdf

SCTH60N120G2-7AG Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Mar 1, 2023 |