
SCTW90N65G2V - Silicon carbide Power MOSFET
SCTW90N65G2V
Datasheet
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
Fe
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SCTW90N65G2V Datasheet Silicon carbide Power MOSFE.
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