SCTW90N65G2V Datasheet, Mosfet, STMicroelectronics

SCTW90N65G2V Features

• Mosfet Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body dio

PDF File Details

Part number:

SCTW90N65G2V

Manufacturer:

STMicroelectronics ↗

File Size:

397.46kb

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW90N65G2V Application

• Applications
• Switching applications
• Power supply for renewable energy systems
• High frequency DC-DC converters AM01475

TAGS

SCTW90N65G2V

STMicroelectronics

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