SCTW90N65G2V Datasheet - STMicroelectronics

SCTW90N65G2V, Silicon carbide Power MOSFET

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package HiP247 D(2, TAB) G(1) S(3) 3 2 1 Fe

Features

* Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* Switching applications
* Power supply for renewable energy systems

SCTW90N65G2V-STMicroelectronics.pdf

SCTW90N65G2V Datasheet Preview — Preview of SCTW90N65G2V PDF

Datasheet Details

Part number:

SCTW90N65G2V

Manufacturer:

STMicroelectronics ↗

File Size:

397.46 KB

Description:

Silicon carbide power mosfet.

SCTW90N65G2V Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTW90N65G2V Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTW90N65G2V-like datasheet