* Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitances ID 119 A Applications
* Switching applicati
SCTW90N65G2V Datasheet (397.46 KB)
SCTW90N65G2V
397.46 KB
Silicon carbide power mosfet.
SCTW90N65G2V
Datasheet
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
Fe.
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