SCTW90N65G2V Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package HiP247 D(2, TAB) G(1) S(3) 3 2 1 Fe.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTW90N65G2V
Manufacturer: STMicroelectronics ↗
File Size: 397.46 KB
Datasheet: SCTW90N65G2V-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* Switching applications
* Power supply for renewable energy systems

SCTW90N65G2V Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTW90N65G2V Silicon carbide Power MOSFET STMicroelectronics

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