SCTW40N120G2V

Silicon carbide Power MOSFET

STMicroelectronics

* Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Switching mode pow

SCTW40N120G2V

199.05 KB

Silicon carbide power mosfet.

📁 Related Datasheet

SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTW100N65G2AG silicon carbide Power MOSFET (STMicroelectronics)

SCTW35N65G2V Silicon carbide Power MOSFET (STMicroelectronics)

SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTW60N120G2 Silicon carbide Power MOSFET (STMicroelectronics)

SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTW90N65G2V Silicon carbide Power MOSFET (STMicroelectronics)

SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

TAGS

Image Gallery