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SCTW40N120G2V - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTW40N120G2V
Manufacturer	STMicroelectronics ↗
File Size	199.05 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW40N120G2V-STMicroelectronics.pdf

SCTW40N120G2V Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |