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SCTW100N65G2AG silicon carbide Power MOSFET

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Description

SCTW100N65G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Features

* Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C) D

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTW100N65G2AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTW100N65G2AG silicon carbide Power MOSFET STMicroelectronics
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