SCTW100N65G2AG

silicon carbide Power MOSFET

STMicroelectronics

* Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1

* AEC-Q101 qualified

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C) D

SCTW100N65G2AG

227.69 KB

Silicon carbide power mosfet.

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