SCTW100N120G2AG

Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

* Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1

* AEC-Q101 qualified

* High speed switching performance

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction tempera

SCTW100N120G2AG

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Automotive-grade silicon carbide power mosfet.

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