SCTW100N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTW100N120G2AG
Manufacturer	STMicroelectronics ↗
File Size	212.57 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW100N120G2AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

📁 SCTW100N120G2AG Similar Datasheet

Other Datasheets by STMicroelectronics

Published: Mar 1, 2023 |