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SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET

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Description

SCTW100N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Features

* Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction tempera

Applications

* Traction for inverters
* DC-DC converters
* Solar inverters

SCTW100N120G2AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics
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