SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTW35N65G2VAG
Manufacturer: STMicroelectronics ↗
File Size: 201.38 KB
Datasheet: SCTW35N65G2VAG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode

Applications

* Switching mode power supply
* EV chargers

SCTW35N65G2VAG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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