SCTW35N65G2VAG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTW35N65G2VAG
Manufacturer	STMicroelectronics ↗
File Size	201.38 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW35N65G2VAG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Low capacitance.

📁 SCTW35N65G2VAG Similar Datasheet

Other Datasheets by STMicroelectronics

Published: Mar 1, 2023 |