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SCTW35N65G2V Datasheet - STMicroelectronics

SCTW35N65G2V Silicon carbide Power MOSFET

SCTW35N65G2V Features

* Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200°C) Applications

* Switching mode power

SCTW35N65G2V Datasheet (200.35 KB)

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Datasheet Details

Part number:

SCTW35N65G2V

Manufacturer:

STMicroelectronics ↗

File Size:

200.35 KB

Description:

Silicon carbide power mosfet.

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