* Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200°C) Applications
* Switching mode power
SCTW35N65G2V Datasheet (200.35 KB)
SCTW35N65G2V
200.35 KB
Silicon carbide power mosfet.
SCTW35N65G2V
Datasheet
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package
HiP247
3 2 1
D(2, TAB)
G(1)
S(3)
AM01475v1_noZe.
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