SCTW35N65G2V Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZe.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTW35N65G2V
Manufacturer: STMicroelectronics ↗
File Size: 200.35 KB
Datasheet: SCTW35N65G2V-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Switching mode power supply
* DC-DC converters

SCTW35N65G2V Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTW35N65G2V Silicon carbide Power MOSFET STMicroelectronics

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