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SCTW35N65G2V - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTW35N65G2V
Manufacturer	STMicroelectronics ↗
File Size	200.35 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW35N65G2V-STMicroelectronics.pdf

SCTW35N65G2V Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200°C).

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Published: Jun 26, 2023 |