SCTW40N120G2VAG

Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

* Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1

* AEC-Q101 qualified

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C)

SCTW40N120G2VAG

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Automotive-grade silicon carbide power mosfet.

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