SCTW40N120G2VAG Datasheet, Mosfet, STMicroelectronics

SCTW40N120G2VAG Features

• Mosfet Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely

PDF File Details

Part number:

SCTW40N120G2VAG

Manufacturer:

STMicroelectronics ↗

File Size:

227.29kb

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📄 Datasheet

Description:

Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW40N120G2VAG Application

• Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) G(1) S(3) AM01475v1

TAGS

SCTW40N120G2VAG

STMicroelectronics

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