SCTW60N120G2 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTW60N120G2 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package HiP247 3 2 1 D(2, TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

📥 Download Datasheet

SCTW60N120G2 Datasheet Preview — Preview of SCTW60N120G2 PDF

Datasheet Specifications

Part number: SCTW60N120G2
Manufacturer: STMicroelectronics ↗
File Size: 196.37 KB
Datasheet: SCTW60N120G2-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Switching mode power supply
* DC-DC converters

SCTW60N120G2 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTW60N120G2 Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTW60N120G2-like datasheet