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SCTW60N120G2 - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTW60N120G2
Manufacturer	STMicroelectronics ↗
File Size	196.37 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW60N120G2-STMicroelectronics.pdf

SCTW60N120G2 Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |