SCTW60N120G2

Silicon carbide Power MOSFET

STMicroelectronics

* Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Switching mode powe

SCTW60N120G2

196.37 KB

Silicon carbide power mosfet.

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SCTW60N120G2 Silicon carbide Power MOSFET STMicroelectronics

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