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SCTW60N120G2AG Datasheet - STMicroelectronics

SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCTW60N120G2AG Features

* Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1

* AEC-Q101 qualified

* High speed switching performance

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction tempera

SCTW60N120G2AG Datasheet (192.35 KB)

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Datasheet Details

Part number:

SCTW60N120G2AG

Manufacturer:

STMicroelectronics ↗

File Size:

192.35 KB

Description:

Automotive-grade silicon carbide power mosfet.

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