SCTW60N120G2AG Datasheet (STMicroelectronics) - Automotive-grade silicon carbide Power MOSFET

SCTW60N120G2AG, Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC materia

SCTW60N120G2AG Features

* Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1

* AEC-Q101 qualified

* High speed switching performance

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction tempera