SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTW60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

📥 Download Datasheet

SCTW60N120G2AG Datasheet Preview — Preview of SCTW60N120G2AG PDF

Datasheet Specifications

Part number: SCTW60N120G2AG
Manufacturer: STMicroelectronics ↗
File Size: 192.35 KB
Datasheet: SCTW60N120G2AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction tempera

Applications

* DC-DC converters
* Solar Inverters and renewable energy
* SMPS

SCTW60N120G2AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTW60N120G2AG-like datasheet