SD10-101 Datasheet | Specifications & PDF Download

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Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q q s Absolute Maximum Ratings Pa

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H a n n Sta r Di s p l a y C o rp . Document Title Document No. HSD101PWW1-A Formal Specification DC140-000855 Page No. Revision 1/26 1.1 TO : Apr.,

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Production specification Schottky Barrier Diode SD101AWS/SD101BWS/SD101CWS FEATURES  Low Forward Voltage Drop  Guard Ring Construction For Transie

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SD101A - SD101C SCHOTTKY BARRIER DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery

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SmartASIC, Inc. SD1010 DATA SHEET SD1010 Dual-Interface XGA TFT LCD Display Controller November 1999 November, 1999 Revision B SmartASIC Confide

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ESD1014, SZESD1014 Low Capacitance ESD Protection Array for High Speed Data Lines Protection The ESD1014 transient voltage suppressor is designed to

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Ordering number : EN0676F 2SD1012 SANYO Semiconductors DATA SHEET 2SD1012 Specifications Parameter Collector-to-Base Voltage Collector-to-Emitter V

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SD101AW - SD101CW 400mW Schottky Barrier Switching Diode SOD-123 Features — Low forward voltage drop — Guard ring construction for transient protect

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 50 Volts SD101BW FEATURES * Low Forward Voltage Drop * Guard Ring Con

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Features * For general purpose applications * The SD101 Series is a metal on silicon schottky barrier device which is protected by a PN junction guard

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WTE POWER SEMICONDUCTORS SD1020CS – SD10100CS 10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip A C J Guard Ring

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H a n n Sta r Di sp l a y C o rp . Document Title Document No. HSD101PFW1-A Formal Specification DC140-000541 Page No. Revision 1/29 1.0 TO : Oct.,

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Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA Specifications Absolute Maximum Ratings at Ta=25°C Parame

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Schottky Barrier Diode FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. P

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Surface Mount Schottky Barrier Diodes P b Lead(Pb)-Free Features: *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible R

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