SD10-101-R Datasheet | Specifications & PDF Download

(19 views)

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q q s Absolute Maximum Ratings Pa

(16 views)

H a n n Sta r Di s p l a y C o rp . Document Title Document No. HSD101PWW1-A Formal Specification DC140-000855 Page No. Revision 1/26 1.1 TO : Apr.,

(15 views)

(14 views)

Production specification Schottky Barrier Diode SD101AWS/SD101BWS/SD101CWS FEATURES  Low Forward Voltage Drop  Guard Ring Construction For Transie

(13 views)

SD101A - SD101C SCHOTTKY BARRIER DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery

(13 views)

SmartASIC, Inc. SD1010 DATA SHEET SD1010 Dual-Interface XGA TFT LCD Display Controller November 1999 November, 1999 Revision B SmartASIC Confide

(13 views)

ESD1014, SZESD1014 Low Capacitance ESD Protection Array for High Speed Data Lines Protection The ESD1014 transient voltage suppressor is designed to

(13 views)

Ordering number : EN0676F 2SD1012 SANYO Semiconductors DATA SHEET 2SD1012 Specifications Parameter Collector-to-Base Voltage Collector-to-Emitter V

(12 views)

(12 views)

SD101AW - SD101CW 400mW Schottky Barrier Switching Diode SOD-123 Features — Low forward voltage drop — Guard ring construction for transient protect

(12 views)

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 50 Volts SD101BW FEATURES * Low Forward Voltage Drop * Guard Ring Con

(12 views)

Features * For general purpose applications * The SD101 Series is a metal on silicon schottky barrier device which is protected by a PN junction guard

(11 views)

(11 views)

WTE POWER SEMICONDUCTORS SD1020CS – SD10100CS 10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip A C J Guard Ring

(11 views)

H a n n Sta r Di sp l a y C o rp . Document Title Document No. HSD101PFW1-A Formal Specification DC140-000541 Page No. Revision 1/29 1.0 TO : Oct.,

(11 views)

Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA Specifications Absolute Maximum Ratings at Ta=25°C Parame

(11 views)

(11 views)

Schottky Barrier Diode FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. P

(11 views)

Surface Mount Schottky Barrier Diodes P b Lead(Pb)-Free Features: *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible R

(11 views)