SD3030 Datasheet | Specifications & PDF Download

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P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD303

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www.eicsemi.com SD3030MR PRV : 30 Volts IO : 30 Amperes SCHOTTKY BARRIER RECTIFIER DIODE MR FEATURES : * High current capability * Low forward volt

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www.eicsemi.com SD3030 SCHOTTKY BARRIER RECTIFIER DIODE PRV : 30 Volts IO : 30 Amperes D6 FEATURES : * High current capability * Low forward volt

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SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V 30A 35 @VGS = 4.5V G S D FEA

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