
2SD860 - Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum L
(10 views)
HITANO ENTERPRISE CORP. SD820 THRU SD8100 TECHNIC.
SD860 Distributor