SE2 Datasheet | Specifications & PDF Download

Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW

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ESE20C/20D Momentary Push Switches Type: ESE20C/ESE20D (H=8.9 mm) Push Switches/ESE20C/20D Features User-friendly tactile feedback when operated Lon

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW

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QSE213C/QSE214C Plastic Silicon Infrared Phototransistor March 2006 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features ■ ■ ■ ■ ■ ■ NP

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METAL OXIDE VARISTORS TNR® When the surge energy much higher than the rated maximum energy is applied to the varistors, it may blow up and catch fire

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ESE20C/20D Momentary Push Switches Type: ESE20C/ESE20D (H=8.9 mm) Push Switches/ESE20C/20D Features User-friendly tactile feedback when operated Lon

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ESE20C/20D Momentary Push Switches Type: ESE20C/ESE20D (H=8.9 mm) Push Switches/ESE20C/20D Features User-friendly tactile feedback when operated Lon

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ESE20C/20D Momentary Push Switches Type: ESE20C/ESE20D (H=8.9 mm) Push Switches/ESE20C/20D Features User-friendly tactile feedback when operated Lon

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WͲŚĂŶŶĞů ŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^& d S Ϯϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A Description The 6(2311B is the highest performance trench P-ch

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P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23

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DATA SHEET SE2425U : 2.4 GHz Bluetooth Power Amplifier IC Applications  Bluetoothtm wireless technology (Class 1)  USB dongles, PCMCIA, flash cards

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Order code 56-0172 Manufacturer code n/a DATA SHEET Description n/a The enclosed information is believed to be correct, Information may change ‘wit

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Features • Incorporates the ARM7TDMI® ARM® Thumb® Processor – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) QSE214 R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177

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Japan China Type: n l l l n l l n E S E 2 0 C n µ ± ± n 2.0 N 2.5 mm 4.0 N ]É 12.5 mm 17.5 mm 12.5 mm 17.5 mm ESE20C323 ESE20C423 ESE20C343

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www.DataSheet4U.com SE2002-DC90A Printheads Hight Speed Thermal Printhead (8dots / mm) SE2002-DC90A High speed, high quality, and high durability ar

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www.DataSheet4U.com SE2003-DC70A Printheads Under development High speed thermal printhead (with thermal historical control) SE2003-DC70A High speed

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