SE2311B P-Channel MOSFET

WILLAS

Description

WͲŚĂŶŶĞůŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^&d SϮϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A .
The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of.

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Datasheet Specifications

Part number: SE2311B
Manufacturer: WILLAS
File Size: 582.18 KB
Datasheet: SE2311B-WILLAS.pdf
Description: P-Channel MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating F

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📁 Related Datasheet

SE23T20B24B SE23T35U12B SE2002-DC70A SE2002-DC90A SE2003-DC70A SE2003-DC90A

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