SE2311B Datasheet - WILLAS

SE2311B P-Channel MOSFET

The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The 6(2311B meet the RoHS and Green Product requirement with full function reliability approv.

SE2311B Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating F

SE2311B-WILLAS.pdf