Datasheet Details
- Part number
- SE2311B
- Manufacturer
- WILLAS
- File Size
- 582.18 KB
- Datasheet
- SE2311B-WILLAS.pdf
- Description
- P-Channel MOSFET
SE2311B Description
WͲŚĂŶŶĞů ŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^& d S Ϯϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A .
The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of.
SE2311B Features
* Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating F
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