Datasheet Details
- Part number
- SE2305GD
- Manufacturer
- WILLAS
- File Size
- 919.04 KB
- Datasheet
- SE2305GD-WILLAS.pdf
- Description
- P-Channel High Density Trench MOSFET
SE2305GD Description
P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23 .
The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
SE2305GD Features
* High power and current handing capability
* Lead free product is acquired
* Surface mount package
* Moisture Sensitivity Level 1
G
S
MECHANICAL DATA
* Case：Molded plastic,SOT-23
* Polarity：Shown above
* Terminals :Plated terminals,
solderable per MIL-STD-750,Method 202
SE2305GD Applications
* ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS -20
V
Gate-Source Voltage
VGS 12
V
Drain Current-Continuousa @ TA = 25 °C
b
-Pulse
Maximum Power Dissipationa
ID IDM PD
-4 -15 1.25
A A W
Operating Junction and Storage T
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