SE2305GD Datasheet - WILLAS

SE2305GD - P-Channel High Density Trench MOSFET

The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit

SE2305GD Features

* High power and current handing capability

* Lead free product is acquired

* Surface mount package

* Moisture Sensitivity Level 1 G S MECHANICAL DATA

* Case：Molded plastic,SOT-23

* Polarity：Shown above

* Terminals :Plated terminals, solderable per MIL-STD-750,Method 202

Datasheet Details

SE2305GD

WILLAS

919.04 KB

P-channel high density trench mosfet.

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