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SE2305GD

P-Channel High Density Trench MOSFET

SE2305GD Features

* High power and current handing capability

* Lead free product is acquired

* Surface mount package

* Moisture Sensitivity Level 1 G S MECHANICAL DATA

* Case：Molded plastic,SOT-23

* Polarity：Shown above

* Terminals :Plated terminals, solderable per MIL-STD-750,Method 202

SE2305GD General Description

The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit .

SE2305GD Datasheet (919.04 KB)

Preview of SE2305GD PDF

Datasheet Details

Part number:

SE2305GD

Manufacturer:

WILLAS

File Size:

919.04 KB

Description:

P-channel high density trench mosfet.
P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23 .

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SE2305GD P-Channel High Density Trench MOSFET WILLAS

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