Adaptenuators 50Ω, 3,6,10 dB, Features • • .
VBsemi
VBMB19R10S - N-Channel Power MOSFET
VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2.
VBsemi
VBM19R10S - N-Channel Power MOSFET
VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2.
VBsemi
VBMB165R10S - N-Channel Power MOSFET
VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) a.
VBsemi
VBM165R10S - N-Channel Power MOSFET
VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) a.
UNIKC
PB210BM - N-Channel MOSFET
PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA =.
Advanced Power Electronics
AP1003BMP-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switchi.
Rohm
RFN10BM3SFH - Super Fast Recovery Diode
Super Fast Recovery Diode RFN10BM3SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit.
Rohm
RFN10BM6SFH - Super Fast Recovery Diode
Super Fast Recovery Diode RFN10BM6SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit.
Bookly
BM15N10 - 100V N-Channel Enhancement Mode MOSFET
100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using hi.
Mini-Circuits
SF-BM-10 - 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell.
Mini-Circuits
SF-BM-3 - 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell.
Mini-Circuits
SF-BM-6 - 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell.
Sumida Corporation
CBM103 - MODEM Transformer
MODEM Transformer< SMD Type: CBM Series> Type: CBM103 •Ÿ Product Description •E 10.0¡Á 9.4mm TPY.(L¡Á W),2.48mm Max. Height. •E Operating frequency:.
Sumida Corporation
CBM103B - MODEM Transformer
MODEM Transformer< SMD Type: CBM Series> Type: CBM103B ◆ Product Description ・10.4×9.7mm Max.(L×W),2.48mm Max. Height. ・Operating frequency: 4MHz Ma.
Advanced Power Electronics
AP1002BMX-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switch.
VBsemi
VBM2102M - P-Channel MOSFET
VBM2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration -100 V 167 mΩ .
VBsemi
VBM1104S - N-Channel MOSFET
VBM1104S www.VBsemi.com N-Channel 100-V (D-S) Super Trench Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO.
VBsemi
VBMB18R10S - N-Channel MOSFET
VBM18R10S / VBMB18R10S / VBP18R10S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2.
VBsemi
VBM18R10S - N-Channel MOSFET
VBM18R10S / VBMB18R10S / VBP18R10S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2.
