SF-BM-10 Datasheet | Specifications & PDF Download

Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switchi

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VBM1104S www.VBsemi.com N-Channel 100-V (D-S) Super Trench Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO

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VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) a

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100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using hi

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PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA =

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Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

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Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switch

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Super Fast Recovery Diode RFN10BM6SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit

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VBM2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration -100 V 167 mΩ

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VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) a

Rating: 1 ★ (3 votes)

Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

Rating: 1 ★ (2 votes)

MODEM Transformer< SMD Type: CBM Series> Type: CBM103 •Ÿ Product Description •E 10.0¡Á 9.4mm TPY.(L¡Á W),2.48mm Max. Height. •E Operating frequency:

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MODEM Transformer< SMD Type: CBM Series> Type: CBM103B ◆ Product Description ・10.4×9.7mm Max.(L×W),2.48mm Max. Height. ・Operating frequency: 4MHz Ma

Rating: 1 ★ (2 votes)

Super Fast Recovery Diode RFN10BM3SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit

Rating: 1 ★ (2 votes)

VBM18R10S / VBMB18R10S / VBP18R10S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

Rating: 1 ★ (2 votes)

VBM18R10S / VBMB18R10S / VBP18R10S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

Rating: 1 ★ (2 votes)

Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

Rating: 1 ★ (1 votes)

VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

Rating: 1 ★ (1 votes)

VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

Rating: 1 ★ (1 votes)