PB210BM Datasheet - UNIKC

PB210BM N-Channel MOSFET

PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 1.3 0.8 18 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16.5 Power Dissipation TA = 25 °C TA = 70 °C PD 0.75 0.3 Operating Junction & Storage .

PB210BM Datasheet (876.82 KB)