PB210BD Datasheet - UNIKC

PB210BD N-Channel MOSFET

PB210BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 230mΩ @VGS = 10V 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 10 TC = 100 °C 6 IDM 40 Avalanche Current IAS 18 Avalanche Engergy L = 0.1 mH EAS 16.5 Power Dissipation TC = 25 °C PD 41 TC = 100 °C 17 Operating Junction & Sto.

PB210BD Datasheet (359.45 KB)