PB210BI Datasheet - UNIKC

PB210BI MOSFET

PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 9A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 9 6 14 Avalanche Current IAS 16 Avalanche Energy L = 0.1 mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 36 14 Oper.

PB210BI Datasheet (460.56 KB)