PB210BTF Datasheet - UNIKC

PB210BTF N-Channel MOSFET

PB210BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 8 5 30 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 Power Dissipation TC = 25 °C TC = 100 °C PD 30 12 Operating Junction & Storage Temperat.

PB210BTF Datasheet (348.69 KB)