PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 240mΩ @VGS = 10V ID 2.2A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 2.2 1.8 8 Avalanche Current IAS 6 Avalanche Energy L = 1mH EAS 18 Power Dissipation TA = 25 °C TA = 100 °C PD 2.5 1.6 Operating Junction & Storage Temper.