SF23_GOOD Datasheet | Specifications & PDF Download

Main Product Characteristics SSF2320Y 20V N-Channel MOSFET D V(BR)DSS 20V D RDS(ON) ID 300mΩ 800mA S G SOT-523 Features and Benefits „ Advance

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GDSSF2336 DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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Main Product Characteristics SSF2319GE 20V P-Channel MOSFET VDSS - 20V RDS(on) 440mΩ (typ.) ID - 400mA Features and Benefits SOT-723 3: Part Mar

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DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

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DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V.

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SF21 THRU SF26 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes Features High reliability Low le

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SSF2301B 20V P-Channel MOSFET DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi

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SSF2305 20V P-Channel MOSFET DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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GDSSF2300A DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as

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GDSSF2300 DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GDSSF2301A DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as

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GDSSF2305 DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GDSSF2307 DESCRIPTION The SSF2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GDSSF2312 DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GDSSF2314 DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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GDSSF2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V

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GDSSF2300B DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as

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GDSSF2301B DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as

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DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

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DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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