Technical Data Data Sheet N1020, Rev. A SF21-SF27.
MT18JSF25672AZ - DDR3 SDRAM UDIMM
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features • DD.F25JZ51 - SF25JZ51
SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51,SF25JZ51 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDR.SF25 - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER SF21- - - SF28 VOLTAGE RANGE: 50 --- 600 V CURRENT: 2.0 A FEATURES Low cost Low leakage Low forward voltag.MT9KSF25672AZ - 1.35V DDR3L SDRAM UDIMM
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT9KSF25672AZ – 2GB MT9KSF51272AZ – 4GB Features • DDR3L functionality a.MT9JSF25672PZ - DDR3 SDRAM RDIMM
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT9JSF25672PZ – 2GB MT9JSF51272PZ – 4GB Features • DDR3 functionality and operat.W0428SF250 - Rectifier Diode
WESTCODE An IXYS Company Date:- 16 Jun, 2006 Data Sheet Issue:- 1 Provisional Data Rectifier Diode Type W0428##250 to W0428##320 Development Type No.JANSR2N7407 - Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
JANSR2N7407 Data Sheet December 1998 File Number 4636 Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The.SF25 - SUPER FAST RECTIFIER
Technical Data Data Sheet N1020, Rev. A SF21-SF27 SUPER FAST RECTIFIER SF21-SF27 DO-15 Features Diffused Junction Low Forward Voltage Drop H.SF25 - GLASS PASSIVATED SUPER FAST RECTIFIER
SF21 THRU SF26 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes Features High reliability Low le.SF25 - GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SF21 THRU SF26 GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes.SF25 - SUPER FAST RECTIFIER DIODES
SF21 - SF29 PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low r.SF25G-T - Super Fast Rectifier
SF21G-T - SF28G-T Taiwan Semiconductor 2A, 50V - 600V Glass Passivated Super Fast Rectifier FEATURES ● Glass passivated chip junction ● High efficie.SST27SF256 - (SST27SFxxx) 256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020 SST27SF256 / 512 / 010 / 020.SSF25N40A - Advanced Power MOSFET
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .WSF256K8-xCx - 256Kx8 SRAM/ FLASH MODULE
www.DataSheet4U.com WSF256K8-XCX 256Kx8 SRAM/ FLASH MODULE FIG. 1 PIN CONFIGURATION TOP VIEW A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 V.IS61SF25616 - (IS61SF25616 / IS61SF25618) SYNCHRONOUS FLOW-THROUGH STATIC RAM
www.DataSheet4U.com IS61SF25616 IS61SF25618 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • • • • • • • • • • Fast access times: .TH50VSF2580AASB - SRAM AND FLASH MEMORY MIXED MULTI-CHIP
TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The.TH50VSF2581AASB - SRAM AND FLASH MEMORY MIXED MULTI-CHIP
TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The.TH50VSF2583AASB - SRAM AND FLASH MEMORY MIXED MULTI-CHIP
TH50VSF2582/2583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The.TSF25 - (TSF21 - TSF26) 2.0A Super Fast Recovery Rectifier
2.0A Super Fast Recovery Rectifier TSF21 – TSF26 2.0A Super Fast Recovery Rectifier Features • • • • • Low forward voltage drop High current capabilit.