SF33_GOOD Datasheet | Specifications & PDF Download

DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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SF31 THRU SF36 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes Features High reliability Low le

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SSF3341L 30V P-Channel MOSFET DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi

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Main Product Characteristics VDSS RDS(on) ID -30V 42mΩ (typ.) -4.2A ① SOT-23 Features and Benefits  Advanced MOSFET process technology  Special

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SSF3338 30V N-Channel MOSFET DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSF3365 30V P-Channel MOSFET DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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Main Product Characteristics VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A ① SOT23 Features and Benefits  Advanced trench MOSFET process technology 

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SF31G THRU SF38G GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts DO-201AD DO-15 Forward Current - 3.0 Ampere FEATURES Low for

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Main Product Characteristics VDSS RDS(on) ID -30V 37mΩ (typ.) -4.1A ① SOT-23 Features and Benefits  Advanced MOSFET process technology  Special

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